? 2001 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 250 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 120 a i ar 30 a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight 6g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s to-247 ad n-channel enhancement mode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 250 a24v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 15 a 55 75 m ? pulse test, t 300 s, duty cycle d 2 % g = gate, d = drain, s = source, tab = drain features international standard package jedec to-247 ad low r ds (on) hdmos tm process rugged polysilicon gate cell structure high commutating dv/dt rating fast switching times applications switch-mode and resonant-mode power supplies motor controls uninterruptible power supplies (ups) dc choppers advantages easy to mount with 1 screw (isolated mounting screw hole) space savings high power density d (tab) 98872 (12/01) standard power mosfet ixth 30n25 v dss = 250 v i d (cont) = 30 a r ds(on) = 75 m ? ? ? ? ? advance technical information
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixth 30n25 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 15 a, pulse test 24 32 s c iss 3950 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 510 pf c rss 177 pf t d(on) 19 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 30a 19 n s t d(off) r g = 3.6 ? (external) 79 ns t f 17 ns q g(on) 136 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 i d25 32 nc q gd 52 nc r thjc 0.65 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive; pulse width limited by t jm 120 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 300 n s q rr 3.0 c dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3
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